Stop-On Silicon Containing Layer Additive

ABSTRACT

Chemical mechanical polishing (CMP) compositions, methods and systems are for polishing patterned semiconductor wafers. The CMP compositions comprising an abrasive and a water soluble aluminum compound additive with a pH&gt;7 suppress CMP stop layer (a silicon containing layer, such as silicon nitride, silicon oxide, or silicon carbide) removal rate. CMP compositions optionally contain surfactant to help wet surface; a corrosion inhibitor to provide corrosion inhibition on metal lines, vias, or trenches; and a pH adjusting agent that is used to adjust pH of the CMP polishing composition.

CROSS REFERENCE TO RELATED PATENT APPLICATIONS

The application is a divisional application of U.S. application Ser. No15/268,956 filed on Sep. 19^(th), 2016 which claims the benefit of U.S.Application No. U.S. Application No. 62/233,251 filed on Sep. 25^(th),2015. The disclosures of the Applications are hereby incorporated byreference.

BACKGROUND

The present invention relates to chemical mechanicalplanarization/planarization (“CMP”) polishing formulations (CMPcomposition or CMP formulations, CMP slurry or slurries are usedinterchangeably) for the CMP of patterned substrate surfaces, such as,for example, patterned semiconductor wafers.

More particularly, also described herein is a CMP polishing compositionfor polishing patterned wafers having multi-type films, such as barrier,Low k or ultra Low k, dielectric, and metal lines or vias or trenches.

There are several CMP steps in integrated circuit (IC) manufacturingprocess. When a CMP processing is applied, a multi-step CMP process maybe employed involving the initial removal and planarization of thecopper overburden, referred to as a step 1 copper CMP process, followedby a barrier layer CMP process. The barrier layer CMP process isfrequently referred to as a barrier or step 2 CMP process.

CMP processing employed a barrier CMP composition at stage 2 is oftenused to remove and planarize excess metal layers and other films on thesurface of the patterned wafers to achieve global planarization.

To address the issue of significant dielectric and metal, such as copperloss of the patterned wafer structure, a CMP stop layer can be used. TheCMP stop layer can stop the metal CMP, especially barrier layer CMP,from removing dielectric layer underneath the barrier layer. The CMPstop layer is effective in protecting the structure againstover-polishing. The CMP stop layer may be made of silicon containingmaterials, such as silicon nitride (abbreviated SiN), siliconoxide(SiO₂), or silicon carbide (SiC). Thus, some CMP applicationsrequire very low removal rates for SiN and/or SiC, since they might beused a stop layer in a certain film stack.

There are works been done in the art to achieve very low SiN rates forshallow trench isolation (STI) applications. Babu et al. (Journal of TheElectrochemical Society, 156, 12, H936-H943, 2009) or Carter et al.(U.S. Pat. No. 7,071,105; Electrochemical and Solid-State Letters, 8, 8,G218-G221, 2005) reported on additives to increase the selectivity ofsilicon oxide to silicon nitride.

Mainly, the addition of certain organic acids was used in the CMPslurries, as for example picolinic acid. However, all these prior artexamples use ceria particles as abrasive which features a completelydifferent removal mechanism than silica particles as abrasive so thatadditives which work with ceria like picolinic acid do not work at allwith silica particles.

Furthermore, STI slurries are usually used at a pH range of 4-7 which isnot suitable for advanced barrier applications due to potentialcorrosion issues on metal films.

Additionally, ceria slurries cannot be used in combination with hydrogenperoxide or other suitable oxidizer which are generally required toachieve sufficient metal or barrier film removal rates.

Therefore, there are significant needs for CMP slurries, methods, andsystems that can perform CMP for very low removal rate on the stop layer(such as silicon containing layers) while providing other meeting otherrequirements such as removal rates for other layers, low dishing and lowdefects.

SUMMARY

Described herein are CMP polishing compositions, methods and systemsthat satisfy the need. Present invention discloses the use of anadditive in CMP slurries, for suppressing removal rates of a siliconcontaining films during CMP process; wherein the additive is a watersoluble aluminum compound.

In one embodiment, described herein is a CMP polishing compositioncomprising:

-   -   0.01 wt % to 20 wt % of an abrasive selected from the group        consisting of high purity colloidal silica particles, alumina,        ceria, germania, silica, titania, zirconia, alumina dopes        colloidal silica in lattices, and mixtures thereof;    -   0.01% to about 10 wt % of a water soluble aluminum compound;    -   optionally,    -   0.0001 wt % to about 5 wt % of a pH adjusting agent;    -   0.0001 wt % to 10 wt % of a surfactant selected from the group        consisting of a). non-ionic surface wetting agents; b). anionic        surface wetting agents; c). cationic surface wetting agents; d).        ampholytic surface wetting agents; and mixtures thereof;    -   0.001% to about 5 wt % of a corrosion inhibitor selected from        the group consisting of chemical additive containing nitrogen        atoms in the molecules;    -   0.5 wt % to 10 wt % of an oxidizing agent selected from the        group consisting of peroxy-compound comprising at least one        peroxy group (O—O), oxidized halide, perboric acid, perborate,        percarbonate, peroxyacid, permanganate, chromate, cerium        compound, ferricyanide, and mixtures thereof; and    -   0.1 wt % to 5 wt % of an organic acid selected from the group        consisting of benzenesulfonic acid, toluenesulfonic acid or any        other suitable organic acid or amino acid or salt thereof;    -   and    -   remaining being water;    -   wherein the polishing composition has a pH above 7; preferably        from about 8 to 12; more preferably from about 10 to 12.

In a further embodiment, described herein is a polishing method forchemical mechanical planarization of a semiconductor device comprisingat least one surface having a first material and a second materialcomprising at least one silicon containing material; comprising thesteps of:

-   -   a) contacting the at least one surface with a polishing pad;    -   b) delivering a polishing composition to the at least one        surface, the polishing composition comprising:        -   0.01 wt % to 20 wt % of an abrasive selected from the group            consisting of high purity colloidal silica particles,            alumina, ceria, germania, silica, titania, zirconia, alumina            dopes colloidal silica in lattices, and mixtures thereof;        -   0.01% to about 10 wt % of a water soluble aluminum compound;        -   optionally,        -   0.0001 wt % to about 5 wt % of a pH adjusting agent;        -   0.0001 wt % to 10 wt % of a surfactant selected from the            group consisting of a). non-ionic surface wetting agents;            b). anionic surface wetting agents; c). cationic surface            wetting agents; d). ampholytic surface wetting agents; and            mixtures thereof;        -   0.001% to about 5 wt % of a corrosion inhibitor selected            from the group consisting of chemical additive containing            nitrogen atoms in the molecules;        -   0.5 wt % to 10 wt % of an oxidizing agent selected from the            group consisting of peroxy-compound comprising at least one            peroxy group (O—O), oxidized halide, perboric acid,            perborate, percarbonate, peroxyacid, permanganate, chromate,            cerium compound, ferricyanide, and mixtures thereof; and        -   0.1 wt % to 5 wt % of an organic acid selected from the            group consisting of benzenesulfonic acid, toluenesulfonic            acid or any other suitable organic acid or amino acid or            salt thereof;        -   and        -   remaining being water;        -   wherein the polishing composition has a pH above 7;            preferably from about 8 to 12; more preferably from about 10            to 12;    -   c) polishing the at least one surface with the polishing        composition to remove the first material and to stop-on the        second material.

In yet another embodiment, described herein is a system for chemicalmechanical planarization, comprising:

-   -   a patterned substrate comprising at least one surface having a        first material and a second material comprising at least one        silicon containing material;    -   a polishing pad; and    -   a polishing composition to the at least one surface, the        polishing composition comprising:        -   0.01 wt % to 20 wt % of an abrasive selected from the group            consisting of high purity colloidal silica particles,            alumina, ceria, germania, silica, titania, zirconia, alumina            dopes colloidal silica in lattices, and mixtures thereof;        -   0.01% to about 10 wt % of a water soluble aluminum compound;        -   optionally,        -   0.0001 wt % to about 5 wt % of a pH adjusting agent;        -   0.0001 wt % to 10 wt % of a surfactant selected from the            group consisting of a). non-ionic surface wetting agents;            b). anionic surface wetting agents; c). cationic surface            wetting agents; d). ampholytic surface wetting agents; and            mixtures thereof;        -   0.001% to about 5 wt % of a corrosion inhibitor selected            from the group consisting of chemical additive containing            nitrogen atoms in the molecules;        -   0.5 wt % to 10 wt % of an oxidizing agent selected from the            group consisting of peroxy-compound comprising at least one            peroxy group (O—O), oxidized halide, perboric acid,            perborate, percarbonate, peroxyacid, permanganate, chromate,            cerium compound, ferricyanide, and mixtures thereof; and        -   0.1 wt % to 5 wt % of an organic acid selected from the            group consisting of benzenesulfonic acid, toluenesulfonic            acid or any other suitable organic acid or amino acid or            salt thereof;        -   and        -   remaining being water;        -   wherein the polishing composition has a pH above 7;            preferably from about 8 to 12; more preferably from about 10            to 12; and    -   the at least one surface is in contact with the polishing pad        and the polishing composition.

The water soluble aluminum compound additive includes, but is notlimited to, sodium aluminate, potassium aluminate, aluminum acetate,aluminum chloride, aluminum sulfate, aluminum hydroxide, andcombinations thereof. It is desired that the aluminum compound should besoluble in slurry formulation at the concentrations added. Aluminatesalts are preferable forms of aluminum compounds. Aluminate salt can begenerated in situ in the CMP slurry formulation by using compounds ofaluminum such as aluminum hydroxide, Al(OH)₃ or aluminum salts such asaluminum acetate, aluminum chloride, aluminum sulfate, etc. with asuitable hydroxide base such as potassium hydroxide, KOH, or sodiumhydroxide, NaOH.

The water soluble aluminum compound may be present in the concentrationranging from 0.01% to about 10 wt %, or more preferably between 0.05% toabout 5 wt % or more preferably between 0.1 wt % and 1 wt %.

The pH-adjusting agent in the polishing composition is selected from thegroup consisting of hydrochloric acid, nitric acid, sulfuric acid,chloroacetic acid, tartaric acid, succinic acid, citric acid, malicacid, malonic acid, sulfonic acid, phosphoric acid, fatty acid,polycarboxylic acid, hydrogen chloride, and mixtures thereof; or isselected from the group consisting of potassium hydroxide, sodiumhydroxide, ammonia, quaternary organic ammonium hydroxide (e.g.tetramethylammonium hydroxide), ethylenediamine, piperazine,polyethyleneimine, modified polyethyleneimine, and mixtures thereof.

The corrosion inhibitor in the polishing composition is selected fromthe group consisting of benzotriazole (BTA) and benzotriazolederivatives, triazole and their relative derivatives; imidizole and itsderivatives, pyrazole and its derivatives, benzoimidizaole and itsderivatives, and combinations thereof.

Non-ionic surfactants may be chosen from a range of chemical typesincluding but not limited to long chain alcohols, ethoxylated alcohols,ethoxylated acetylenic diol surfactants, polyethylene glycol alkylethers, proplylene glycol alkyl ethers, glucoside alkyl ethers,polyethylene glycol octylphenyl ethers, polyethylene glycol alkylpgenylethers, glycerol alkyl esters, polyoxyethylene glycol sorbiton alkylesters, sorbiton alkyl esters, cocamide monoethanol amine, cocamidediethanol amine dodecyl dimethylamine oxide, block copolymers ofpolyethylene glycol and polypropylene glycol, polyethoxylated tallowamines, fluorosurfactants. The molecular weight of surfactants may rangefrom several hundreds to over 1 million. The viscosities of thesematerials also possess a very broad distribution.

Anionic surfactants include, but are not limited to salts with suitablehydrophobic tails, such as alkyl carboxylate, alkyl polyacrylic salt,alkyl sulfate, alkyl phosphate, alkyl bicarboxylate, alkyl bisulfate,alkyl biphosphate, such as alkoxy carboxylate, alkoxy sulfate, alkoxyphosphate, alkoxy bicarboxylate, alkoxy bisulfate, alkoxy biphosphate,such as substituted aryl carboxylate, substituted aryl sulfate,substituted aryl phosphate, substituted aryl bicarboxylate, substitutedaryl bisulfate, substituted aryl biphosphate etc. The counter ions forthis type of surface wetting agents include, but are not limited topotassium, ammonium and other positive ions. The molecular weights ofthese anionic surface wetting agents range from several hundred toseveral hundred-thousands.

Cationic surface wetting agents possess the positive net charge on majorpart of molecular frame. Cationic surfactants are typically halides ofmolecules comprising hydrophobic chain and cationic charge centers suchas amines, quaternary ammonium, benzyalkonium and alkylpyridinium ions.

Yet, in another aspect, the surfactant can be an ampholytic surfacewetting agents possess both positive (cationic) and negative (anionic)charges on the main molecular chains and with their relative counterions. The cationic part is based on primary, secondary, or tertiaryamines or quaternary ammonium cations. The anionic part can be morevariable and include sulfonates, as in the sultaines CHAPS(3-[(3-Cholamidopropyl)dimethylammonio]-1-propanesulfonate) andcocamidopropyl hydroxysultaine. Betaines such as cocamidopropyl betainehave a carboxylate with the ammonium. Some of the ampholytic surfactantsmay have a phosphate anion with an amine or ammonium, such as thephospholipids phosphatidylserine, phosphatidylethanolamine,phosphatidylcholine, and sphingomyelins.

The first material includes but is not limited to metal films selectedfrom the group consisting of Cu, W, Co, Al and combinations thereof;barrier or liner films selected from the group consisting of Ta, TaN,Ti, TiN, Ru and combinations thereof; dielectric films including low-kmaterial; and combinations thereof; and the at least one siliconcontaining material includes but is not limited to silicon nitride,silicon oxide, silicon carbide, and combinations thereof.

BRIEF DESCRIPTION OF THE DRAWINGS

The present invention will hereinafter be described in conjunction withthe appended figures wherein like numerals denote like elements:

FIG. 1 shows the SiN removal rates from barrier CMP polishing slurriescomprising a stop-on aluminate salt additive (sodium aluminate)

FIG. 2 shows the SiN removal rates as the function of the aluminate salt(sodium aluminate) concentration in the barrier CMP polishing slurries

FIG. 3 shows the removal rates of different films in barrier layer usingbarrier CMP polishing slurries containing an aluminate salt (sodiumaluminate) with no oxidizing agent

FIG. 4 shows the removal rates of different films in barrier layer usingbarrier CMP polishing slurries containing an aluminate salt (sodiumaluminate) and an oxidizing agent

FIG. 5 shows the removal rates of different films in barrier layer usingbarrier CMP polishing slurries containing an aluminate salt (potassiumaluminate) with no oxidizing agent

FIG. 6 shows the silicon nitrate (SiN) and silicon oxide (TEOS) removalrates as the function of the aluminate salt concentration (potassiumaluminate) in the barrier CMP polishing slurries

FIG. 7 shows the removal rates of different films in barrier layer usingbarrier CMP polishing slurries containing an aluminate salt (aluminumacetate) with no oxidizing agent

DETAILED DESCRIPTION

Many CMP applications involve simultaneous polishing of two or morelayers, wherein the one or more layers is polished at high ratesrelative to another layer (stopping layer) which needs to be polished ata much lower rate. Many applications use a stopping layer comprisingsilicon or a compound of silicon including but not limited to siliconoxide, silicon nitride, silicon oxy-nitride, silicon carbide or siliconoxy-carbide, poly-silicon, amorphous silicon or any other combinationcomprising silicon, oxygen, oxygen, carbon, nitrogen, hydrogen. This canbe very difficult to achieve since high removal rates for other films inthe stack may be only achievable with a high abrasive loading inevitablyleading to a higher removal rate for the stopping film. This isparticularly problematic if silica particles are used as abrasives and ahigher pH (>7) is necessary for performance reasons. Silicon containingfilms such as SiN or SiO₂ undergo hydrolysis in alkaline pH rangeresulting in higher removal rates of the films. Therefore, there is aneed for additives that allow stopping on SiN and/or SiC withoutsacrificing any other removal rates or selectivities.

The first material includes but is not limited to metal films selectedfrom the group consisting of Cu, W, Co, Al and combinations thereof;barrier or liner films selected from the group consisting of Ta, TaN,Ti, TiN, Ru and combinations thereof; dielectric films including low-kmaterial; and combinations thereof; and the at least one siliconcontaining material includes but is not limited to silicon nitride,silicon oxide, silicon carbide, and combinations thereof.

Formulations of this invention are especially useful for polishingsemiconductor wafers containing different levels of materials. The wafercontains at least a surface comprising a first material and at least onesilicon containing material.

The first material includes but is not limited to metal films selectedfrom the group consisting of Cu, W, Co, Al and combinations thereof;barrier or liner films selected from the group consisting of Ta, TaN,Ti, TiN, Ru and combinations thereof; dielectric films including low-kmaterial; and combinations thereof; and the at least one siliconcontaining material includes but is not limited to silicon nitride,silicon oxide, silicon carbide, and combinations thereof.

Formulations of this invention are especially useful for reducing theremoval rates of silicon containing films such as silicon oxide (SiO₂),silicon nitride (SiN), silicon carbide (SiC), silicon oxy-carbide (SiOC)

Compositions of this invention provides at least one of the following:(1)low removal rates of a stop layer; (2)maintaining a high removalrates of various types of other film/layer; (3) desirable selectivityamong various films; (4) a desirable low level of within a wafernon-uniformity (“WIW NU %”); and (5)low residue level(s) being presenton the polished wafer(s) subsequent to CMP processing.

Present invention discloses the use of an additive in CMP slurries, forsuppressing removal rates of a silicon containing films during CMPprocess; wherein the additive is a water soluble aluminum compound.

CMP compositions of present invention comprise abrasive particles, watersoluble aluminum compound, and water. Optionally compositions may alsocomprise other functional additives including but not limited tocomplexing or chelating agents, pH modifiers, removal rate selectivitymodifiers, corrosion inhibitors, oxidizers, surfactants, dispersants,catalysts, and biocides or preservatives.

The water soluble aluminum compound additive includes, but is notlimited to, sodium aluminate, potassium aluminate, aluminum acetate,aluminum chloride, aluminum sulfate, aluminum hydroxide, andcombinations thereof. Preferable for of aluminum containing compound isaluminates. Alternatively, the aluminate salt can be generated in situin the CMP slurry formulation by using a compounds of aluminum such asaluminum hydroxide, Al(OH)₃ or aluminum salts such as aluminum acetate,aluminum chloride, aluminum sulfate, etc. with a suitable hydroxide basesuch as potassium hydroxide, KOH, or sodium hydroxide, NaOH. In alkalinepH, the salts may undergo hydrolysis and form aluminate anions([Al(OH)₄]⁻). Aluminate anions may undergo polymerization to formdimeric or polymeric aluminum complexes.

Without being limited by theory, it is believed that Si containing filmshydrolyze and form silanol species (Si—OH) at the surface in during CMPwhich is generally regarded as essential step for achieving high removalrates for CMP. Aluminate species subsequently forms an insoluble complexwith it similar to Al-silicate. The insoluble complex acts as aninhibitor against further hydrolysis of the films, thereby suppressingthe removal rates of the Si containing films.

The amount of a water soluble aluminum compound ranges from about 0.01wt % to about 10 wt % relative to the total weight of the CMPcomposition. The preferred range is from about 0.05 wt % to about 3 wt%, and more preferred range is from about 0.1 wt % to about 1 wt %.

The suitable abrasives for this invention include, but are not limitedto, high purity colloidal silica particles, alumina, ceria, germania,silica, titania, zirconia, alumina dopes colloidal silica in lattices,ceria coated silica particles and mixtures thereof.

The preferred particulate material is colloidal silica. The colloidalsilica can be made from sodium silicate, or can be made from TEOS orTMOS. Still preferred is colloidal silica with very low levels of tracemetal impurities. Examples of high purity colloidal silica that can beused are Fuso PL-3, PL2, PL3H and PL3L high purity colloidal silicaparticles obtained from Fuso Chemical Company, Japan.

A mixture of colloidal silica particles of different particle sizes andtypes may also yield improved performance

The abrasive is present in an amount from 0.01 wt % to 20 wt %,preferably, from 0.05 wt % to 10 wt %, more preferably, from about 0.1wt % to about 5 wt %.

The polishing composition has a pH above 7; preferably from about 8 to12; more preferably from about 10 to 12.

Formulations of this invention are especially effective at pH 7 orhigher where solubility of the water soluble aluminum compound ishigher. Alkaline pH is also suitable for CMP compositions that requireprotection of metals such as copper and cobalt. Higher pH is alsodesired for improved colloidal stability for the particles used in theCMP slurry.

The polishing composition may optionally include an oxidizing agent.

The oxidizing agent can be any suitable oxidizing agent.

Suitable oxidizing agents includes, but is not limited to, one or moreperoxy-compounds, which comprise at least one peroxy group (O—O).Suitable peroxy-compounds include, for example, but are not limited to,peroxides, persulfates (e.g., monopersulfates and dipersulfates),percarbonates, and acids thereof, and salts thereof, and mixturesthereof.

Other suitable oxidizing agents include, for example, oxidized halides(e.g., chlorates, bromates, iodates, perchlorates, perbromates,periodates, and acids thereof, and mixtures thereof, and the like),perboric acid, perborates, percarbonates, peroxyacids (e.g., peraceticacid, perbenzoic acid, m-chloroperbenzoic acid, salts thereof, mixturesthereof, and the like), permanganates, chromates, cerium compounds,ferricyanides (e.g., potassium ferricyanide), mixtures thereof, and thelike. Some specific oxidizers that are useful in composition and methoddescribed herein include, but are not limited to, hydrogen peroxide,periodic acid, potassium iodate, potassium permanganate, ammoniumpersulfate, ammonium molybdate, ferric nitrate, nitric acid, potassiumnitrate, ammonia, and other amine compounds, and mixtures thereof.

Preferred oxidizing agent is peroxide including, for example, hydrogenperoxide and urea-hydrogen peroxide.

The amount of oxidizing agent ranges from about 0.01 wt % to 10 wt %relative to the total weight of the CMP composition. The preferred rangeis from about 0.1 wt % to 4 wt %, and more preferred range is from about0.5 wt % to 2 wt %.

Removal rates of Si containing films such as SiN, SiC, TEOS during CMPformulations can be suppressed with the water soluble aluminum compoundeven in the absence of oxidizing agent. However certain applicationssuch as metal and barrier CMP would need oxidizer addition.

CMP slurry formulations may also optionally include surfactants orsurface wetting agents. Surfactants may be used to for a variety ofpurposes such as reducing defects on the wafers, tuning of removal ratesand reduction in post-polish topography. The suitable surfactantincludes, but is not limited to, a). non-ionic surface wetting agents;b). anionic surface wetting agents; c). cationic surface wetting agents;d). ampholytic surface wetting agents; and mixtures thereof.

In one aspect, the surfactant can be a nonionic surfactant. Non-ionicsurfactants may be chosen from a range of chemical types including butnot limited to long chain alcohols, ethoxylated alcohols, ethoxylatedacetylenic diol surfactants, polyethylene glycol alkyl ethers,proplylene glycol alkyl ethers, glucoside alkyl ethers, polyethyleneglycol octylphenyl ethers, polyethylene glycol alkylpgenyl ethers,glycerol alkyl esters, polyoxyethylene glycol sorbiton alkyl esters,sorbiton alkyl esters, cocamide monoethanol amine, cocamide diethanolamine dodecyl dimethylamine oxide, block copolymers of polyethyleneglycol and polypropylene glycol, polyethoxylated tallow amines,fluorosurfactants. The molecular weight of surfactants may range fromseveral hundreds to over 1 million. The viscosities of these materialsalso possess a very broad distribution.

Several commercially available nonionic surfactants that can be used inthe CMP polishing slurries include, but are not limited to ethoxylatedalcohols such as those from the Tergitol® series (e.g., Tergitol® 15530,Tergitol® 15S9), manufactured by Dow Chemical; surfactants from theSurfynol® series (e.g. Surfynol® 440 and Surfynol® 465), and Dynol™series (e.g. Dynol™ 607 and Dynol™ 604) manufactured by Air Products andChemicals, Inc.; fluorinated surfactants, such as those from the Zonyl®family (e.g., Zonyl® FSO and Zonyl® FSN surfactants), manufactured byE.I. DuPont de Nemours and Company; Alkoxylated surfactant such as Tego®Wet 510 manufactured from Evonik; fluorinated PolyFox® nonionicsurfactants (e.g., PF159 nonionic surfactants), manufactured by Omnova;or combinations thereof.

In another aspect, the surfactant can be an anionic surface wettingagents are compounds possess the negative net charge on major part ofmolecular frame. These compounds include, but are not limited to saltswith suitable hydrophobic tails, such as alkyl carboxylate, alkylpolyacrylic salt, alkyl sulfate, alkyl phosphate, alkyl bicarboxylate,alkyl bisulfate, alkyl biphosphate, such as alkoxy carboxylate, alkoxysulfate, alkoxy phosphate, alkoxy bicarboxylate, alkoxy bisulfate,alkoxy biphosphate, such as substituted aryl carboxylate, substitutedaryl sulfate, substituted aryl phosphate, substituted arylbicarboxylate, substituted aryl bisulfate, substituted aryl biphosphateetc. The counter ions for this type of surface wetting agents include,but are not limited to potassium, ammonium and other positive ions. Themolecular weights of these anionic surface wetting agents range fromseveral hundred to several hundred-thousands.

In another aspect, the surfactant can be cationic surface wetting agentspossess the positive net charge on major part of molecular frame.Cationic surfactants are typically halides of molecules comprisinghydrophobic chain and cationic charge centers such as amines, quaternaryammonium, benzyalkonium and alkylpyridinium ions.

Yet, in another aspect, the surfactant can be an ampholytic surfacewetting agents possess both positive (cationic) and negative (anionic)charges on the main molecular chains and with their relative counterions. The cationic part is based on primary, secondary, or tertiaryamines or quaternary ammonium cations. The anionic part can be morevariable and include sulfonates, as in the sultaines CHAPS(3-[(3-Cholamidopropyl)dimethylammonio]-1-propanesulfonate) andcocamidopropyl hydroxysultaine. Betaines such as cocamidopropyl betainehave a carboxylate with the ammonium. Some of the ampholytic surfactantsmay have a phosphate anion with an amine or ammonium, such as thephospholipids phosphatidylserine, phosphatidylethanolamine,phosphatidylcholine, and sphingomyelins.

Examples of suitable commercially available surfactants include TRITON™,Tergitol™, DOWFAX™ family of surfactants manufactured by Dow Chemicalsand various surfactants in SUIRFYNOL™, DYNOL™, Zetasperse™, Nonidet™,and Tomadol™ surfactant families, manufactured by Air Products andChemicals. Suitable surfactants of surfactants may also include polymerscomprising ethylene oxide (EO) and propylene oxide (PO) groups. Anexample of EO-PO polymer is Tetronic™ 90R4 from BASF Chemicals.

The amount of surfactant ranges from about 0.0001 wt % to about 10 wt %relative to the total weight of the CMP composition. The preferred rangeis from about 0.001 wt % to about 1 wt %, and more preferred range isfrom about 0.005 wt % to about 0.1 wt %.

The CMP polishing composition may further comprise a pH-adjusting agentto improve the stability of the polishing composition, tune the ionicstrength of the polishing composition, and improve the safety inhandling and use. The pH-adjusting agent may be used to raise or lowerthe pH of the polishing composition.

Suitable pH-adjusting agents to lower the pH of the polishingcomposition include various organic and inorganic acids including butnot limited to hydrochloric acid, nitric acid, sulfuric acid,chloroacetic acid, tartaric acid, succinic acid, citric acid, malicacid, malonic acid, sulfonic acid, phosphoric acid, various fatty acids,various polycarboxylic acids, hydrogen chloride, and mixtures thereof.

Suitable pH-adjusting agents to raise the pH of the polishingcomposition include organic or inorganic bases including but not limitedto potassium hydroxide, sodium hydroxide, ammonia, quaternary organicammonium hydroxide (e.g.

tetramethylammonium hydroxide), ethylenediamine, piperazine,polyethyleneimine, modified polyethyleneimine, and mixtures thereof.

The amount of pH-adjusting agent ranges from about 0.0001 wt % to about5 wt % relative to the total weight of the CMP composition. Thepreferred range is from about 0.0005% to about 1 wt %, and morepreferred range is from about 0.0005 wt % to about 0.5 wt %, and mostpreferred range is from about 0.001 wt % to about 0.1 wt %.

The CMP composition may further comprise a corrosion inhibitor.

The suitable corrosion inhibitor includes, but is not limited to,chemical additives contain nitrogen atoms in the molecules. Examples ofcorrosion inhibitors include but not limited to benzotriazole (BTA) andbenzotriazole derivatives, triazole and their relative derivatives;imidizole, pyrazole and its derivatives, benzoimidizaole and itsderivatives, and combinations thereof.

The amount of corrosion inhibitor ranges from about 0.0005 wt % to about0.5 wt % relative to the total weight of the CMP composition. Thepreferred range is from about 0.0025% to about 0.15 wt %, and morepreferred range is from about 0.01 wt % to about 0.1 wt %,

CMP composition may further comprise aromatic organic acid. The aromaticorganic acid can be described as a ligand that can have someinteractions with some films on the surfaces of the wafers.

The aromatic organic acid includes, but is not limited tobenzenesulfonic acid or toluenesulfonic acid or any other organic acidor amino acid.

The amount of aromatic organic acid ranges from about 0.1 wt % to about5 wt % relative to the total weight of the CMP composition. Thepreferred range is from about 0.2 wt % to about 2 wt %, and morepreferred range is from about 0.25 wt % to about 1 wt %.

CMP slurry may include a chelating or complexing agent. Complexing agentmay serve different purposes such as increasing removal rates duringCMP, reduce pad staining, increasing solutbility of the water solublealuminum compound, increasing the pH range where the aluminum compoundsare soluble.

The suitable chelating agent includes, but is not limited to organicacids and their salts; polymeric acids and their salts; water solublecopolymers and their salts; copolymers and their salts containing atleast two different types of acid groups selected from carboxylic acidgroups; sulfonic acid groups; phosphoric acids; and pyridine acids inthe same molecule of a copolymer; polyvinyl acids and their salts,inorganic potassium silicate and ammonium silicate; polyethylene oxide;polypropylene oxide; pyridine, pyridine derivatives, bipyridine,bipyridine derivatives, and combinations thereof.

The organic acids include but are not limited to amino acids; carboxylicacids; phosphoric acids; sulfonic acids; polyvinyl acids; and pyridineacids; bipyridine acids.

The polymeric acids and their salts include but are not limited topolymeric compounds that having a functional group selected from thegroup consisting of carboxylic acids and their salts thereof; sulfonicacids and their salts thereof; phosphonic acids and their salts thereof;pyridine acids and their salts thereof. Examples are polymericcarboxylic acids and their salts thereof; polymeric sulfonic acids andtheir salts thereof; polymeric phosphonic acids and their salts thereof;polymeric pyridine acids and their salts thereof. More specific examplesare polyacrylic acids and their salts; polystyrene sulfonic acids andtheir salts; bipyridine acids and their salts.

The amount of chelating agent ranges from about 0.001 wt % to about 5 wt% relative to the total weight of the CMP composition. The preferredrange is from about 0.01% to about 2.0 wt %, and more preferred range isfrom about 0.1 wt % to about 1.0 wt %.

The CMP slurry formulations may include a catalyst to increase theremoval rates of metallic films. Catalyst may comprise a metal compoundof Ag, Co, Cr, Cu, Fe, Mo, Mn, Nb, Ni, Os, Pd, Ru, Sn, Ti, V andmixtures thereof having multiple oxidation states. Metal compound may beadded to the CMP slurry by dissolving the compound. Alternatively,particles with a surface containing the compounds of metals withmultiple oxidation states may be used as heterogeneous catalysts.Catalysts promote hydroxyl radical formation when oxidizers with peroxygroup (0-0) such as hydrogen peroxide is used in CMP formulations.Hydroxyl radical formation would increase the removal rates of metallicfilms such as tungsten. Catalyst concentration in the CMP formulationsmay range from 0.0001 wt % to 1 wt % or more preferably between 0.001 wt% and 0.5 wt %.

The CMP composition may comprise biological growth inhibitors orpreservatives to prevent bacterial and fungal growth during storage.

The biological growth inhibitors include, but are not limited to,tetramethylammonium chloride, tetraethylammonium chloride,tetrapropylammonium chloride, alkylbenzyldimethylammonium chloride, andalkylbenzyldimethylammonium hydroxide, wherein the alkyl chain rangesfrom 1 to about 20 carbon atoms, methylisothiazolinone,5-chloro-2-methyl-4-isothiazolin-3-one (chloromethylisothiazolinone orCMIT), sodium chlorite, and sodium hypochlorite. Some of thecommercially available preservatives include KATHON™ and NEOLENE™product families from Dow Chemicals, and Preventol™ family from Lanxess.More are disclosed in U.S. Pat. No. 5,230,833 (Romberger et al.) and USPatent Application No. US 20020025762. The contents of which are herebyincorporated by reference as if set forth in their entireties.

Dispersing agents may be used to improve colloidal stability ofparticles. Dispersing agents may comprise surfactants and polymers.Examples of dispersing agents include poly-acrylic acid, poly-methacrylic acid.

The amount of dispersing agent ranges from about 0.001 wt % to about 5wt % relative to the total weight of the CMP composition. The preferredrange is from about 0.01% to about 1.0 wt %,

In certain embodiments, the formulations can be made in a concentratedform and diluted at point of use with water and optionally oxidizer.

In certain embodiments, formulations can be shipped in two or moreparts; an abrasive rich part and a chemical rich part, to be mixed atthe point of use in order to eliminate any stability issues.

In one embodiment, the compositions of this invention may be used topolish the conducting metal structures selectively to the stopping layersurrounding the structure, wherein the stopping layer comprise siliconor a compound of silicon including but not limited to silicon oxide,silicon nitride, silicon oxy-nitride, silicon carbide or siliconoxy-carbide, poly-silicon, amorphous silicon or any other combinationcomprising silicon, oxygen, oxygen, carbon, nitrogen, hydrogen.Conducting metal structure may comprise metals or alloys such as copper,tungsten, cobalt. The removal rate ratio between the blanket metallicfilm and the stopping layer is greater than 10, or more preferablygreater than 50 or even more preferably greater than 100.

In yet another embodiment, the polishing slurries of this invention maybe used to polish the conducting metal structures with one or moremetallic layers sandwiched between the conducting metal and thesurrounding layer. The sandwiched metallic layer may provide functionssuch as but not limited to barrier against metal ion diffusion, alinermaterial, a glue layer. The sandwiched metallic layer may comprisebut not limited to titanium, titanium nitride (TIN), cobalt, ruthenium,tantalum, tantalum nitride and self-forming barrier films which arealloy films of the interconnect metal with metals such as but notlimited to Mn, Cr, V, Ru, Zr, C, Mo, Ag, W. The structures may alsoinclude a stopping layer comprising silicon or a compound of siliconincluding but not limited to silicon oxide, silicon nitride, siliconoxy-nitride, silicon carbide or silicon oxy-carbide, poly-silicon,amorphous silicon or any other combination comprising silicon, oxygen,oxygen, carbon, nitrogen, hydrogen. Blanket metallic barrier layer ispolished at removal rates, preferably greater than 200 Å/min orpreferably greater than 300 Å/min at 1.5 psi downforce, whilesuppressing the removal rates of stopping film to less than 100Angstroms/min or preferably less than 50 Angstroms/min or mostpreferably less than 10 Angstroms/min.

General Experimental Procedure

The associated processes described herein entail use of theaforementioned composition for barrier chemical mechanical planarizationof patterned substrate surfaces.

The polishing composition and associated processes and systems describedherein are effective for CMP of a substrate with a variety of surfaces,particularly useful for retarding stop layer, such as SiN and/or SiCremoval rate.

In the processes, a substrate (e.g., a patterned wafer with a variety ofsurfaces) is placed face-down on a polishing pad which is fixedlyattached to a rotatable platen of a CMP polisher. In this manner, thesubstrate to be polished and planarized is placed in direct contact withthe polishing pad. A wafer carrier system or polishing head is used tohold the substrate in place and to apply a downward pressure against thebackside of the substrate during CMP processing while the platen and thesubstrate are rotated. The polishing composition is applied (usuallycontinuously) on the pad during CMP processing to effect the removal ofmaterial to planarize the substrate.

Polishing Pad: Fujibo H7000HN pad, supplied by Narubeni AmericaCorporation, was used for CMP process. Co (PVD) barrier layer wasdeposited by PVD process. SiN and/or SiC film was deposited by PECVDdeposition process. TEOS oxide film was deposited by Chemical VaporDeposition (CVD) using tetraethyl orthosilicate as the precursor.

Parameters

Å: angstrom(s)—a unit of length

BP: back pressure, in psi units

CMP: chemical mechanical planarization=chemical mechanical polishing

CS: carrier speed

DF: Down force: pressure applied during CMP, units psi

min: minute(s)

ml: milliliter(s)

mV: millivolt(s)

psi: pounds per square inch

PS: platen rotational speed of polishing tool, in rpm (revolution(s) perminute)

SF: polishing composition flow, ml/min

Removal Rates and Removal Selectivity

Removal Rate(RR)=(film thickness before polishing−film thickness afterpolishing)/polish time.

Cu RR: Measured PVD Co removal rate at 2.0 psi (with soft Fujibo pad)down pressure of the CMP tool

SiN RR: Measured SiN removal rate at 2.0 psi (with soft Fujibo pad) downpressure of the CMP tool

BD1 RR: Measured BD1 removal rate at 2.0 psi (with soft Fujibo pad) downpressure of the CMP tool

Co RR: Measured Co removal rate at 2.0 psi (with soft Fujibo pad) downpressure of the CMP tool

TaN RR: Measured TaN removal rate at 2.0 psi (with soft Fujibo pad) downpressure of the CMP tool

All percentages are weight percentages unless otherwise indicated.

In the examples presented below, CMP experiments were run using theprocedures and experimental conditions given below.

The CMP tool that was used in the examples is a Mirra®, manufactured byApplied Materials, 3050 Boweres Avenue, Santa Clara, Calif., 95054. AFujibo H7000HN pad, supplied by Narubeni America Corporation, was usedon the platen for the blanket wafer polishing studies. Pads werebroken-in by polishing twenty-five dummy oxide (deposited by plasmaenhanced CVD from a TEOS precursor, PETEOS) wafers. In order to qualifythe tool settings and the pad break-in, two PETEOS monitors werepolished with Syton® OX-K colloidal silica, supplied by Air ProductsChemical Incorporation, at baseline conditions. Polishing experimentswere conducted using electroplating deposited copper, low-k dielectriclayer materials (Black Diamond®), tantalum nitride, PVD cobalt andsilicon nitride wafers. These blanket wafers were purchased from SiliconValley Microelectronics, 1150 Campbell Ave, Calif., 95126, and AdvantivCorporation.

In the examples, the chemicals, such as aluminate salt, or the chemicalsused to generate the aluminate salt, such as aluminum hydroxide orAl(OH)₃, potassium hydroxide or KOH, sodium hydroxide or NaOH, werepurchased from Sigma-Aldrich Corporation.

WORKING EXAMPLES

In the following working examples, the CMP polishing slurries compriseda corrosion inhibitor such as benzotriazole (BTA) and benzotriazolederivatives, triazole or triazole derivatives, such as3-amino-1,2,4-triazole, 3,5-diamino-1,2,4-triaozle, a chemical additiveas ligand such as benzenesulfonic acid as the surface wettingagent/surfactant, an aluminate salt, an abrasive, a pH-adjusting agent,and optionally an oxidizing agent and an aromatic organic acid.

TABLE I Control Composition Wt % Potassium hydroxide(KOH) 0.7021Benzotriazole 0.0105 Benzenesulfonic acid 0.4540 Fuso PL3 3.1035 Dynol607 0.0078 Water 95.7221

The barrier CMP slurries were used for polishing various types of filmsof relevance for barrier applications. The pH of the CMP polishingslurries were around 10-11.

A barrier CMP composition (shown in Table I) was used as a control orreference composition.

The working barrier CMP polishing slurries were obtained by addingdifferent amount of aluminate salt to the control composition.Alternatively, the aluminate salt can be generated in situ by mixing astoichiometric amount of aluminum hydroxide, Al(OH)₃ with potassiumhydroxide, KOH, or sodium hydroxide, NaOH.

Example 1

0.10 wt %, 0.15 wt % and 0.25 wt % of sodium aluminate (NaAlO₂) wereadded to the control composition (as shown in Table I) to obtain thebarrier CMP polishing slurries as shown in Table II. The CMP slurrieswere then used to polish SiN substrate. The SiN removal rate resultswere shown in Table II and FIG. 1.

FIG. 2 gave the SiN removal rate as the function of the concentrationsof sodium aluminate in the slurries.

TABLE II SiN RR CMP polishing Composition (Å/min) Control 147 Control +0.10 wt % Sodium Aluminate 95 Control + 0.15 wt % Sodium Aluminate 84Control + 0.25 wt % Sodium Aluminate 0

The results showed that with the addition of 0.10 wt % of sodiumaluminate (NaAlO₂) the SiN removal rate was reduced by 35% versus thecontrol composition without any aluminate salt additive. The addition of0.15 wt % of sodium aluminate brought down the SiN removal rate by 43%versus the control composition. While with the addition of 0.25 wt % ofsodium aluminate, the SiN removal rate dropped to 0.

The data also indicated that the SiN removal rate could be tuned asdesired.

Example 2

The same CMP slurries used in Example 1 were also used to polish anumber of films of relevance for barrier application such as copper andlow-K (BD1).

The results of removal rates were shown in Table III and FIG. 3.

TABLE III BD1 RR SiN RR Cu RR (Å/min) (Å/min) (Å/min) Control 663 147128 Control + 0.10 wt % 655 95 183 Sodium Aluminate Control + 0.15 wt %733 84 172 Sodium Aluminate Control + 0.25 wt % 469 0 160 SodiumAluminate

The results have shown that the sodium aluminate additive reduced theSiN removal rate, meanwhile did not at all or only minimally affect theremoval rates of other barrier films.

Example 3

Measurements were performed with CMP polishing slurries containingperoxide (as an oxidizing agent).

Removal rates were measured on different films cobalt, copper, andtantalum nitride. The results were shown in Table IV and FIG. 4.

TABLE IV SiN RR Co RR Cu RR TaN RR Formulation (Å/min) (Å/min) (Å/min)(Å/min) Control + 1 wt % H₂O₂ 122 227 171 328 Control + 0.25 wt % 0 25784 240 Sodium Aluminate + 1 wt % H₂O₂

Again, the results have shown that the sodium aluminate additive in theCMP slurries containing peroxide reduced the removal rate on SiN, butonly minimally affect the removal rates of other barrier films.

Example 4

0.10 wt %, 0.20 wt %, 0.25 wt % and 0.3 wt % of potassium aluminate(KAlO₂) were added to the control composition (as shown in Table I) toobtain the barrier CMP polishing slurries.

The potassium aluminate (KAlO₂) was generated in situ by mixing astoichiometric amount of aluminum hydroxide, Al(OH)₃with potassiumhydroxide, KOH.

The CMP slurries were used to polish a number of films of relevance forbarrier application such as cobalt, copper, low-K (BD1), silicon oxide(SiO₂) (TEOS), and silicon nitride(SiN).

The results of removal rates were shown in Table V and FIGS. 5 and 6.

TABLE V SiN RR TEOS RR BD1 RR Co RR Cu RR (Å/min) (Å/min) (Å/min)(Å/min) (Å/min) Control (Ctrl) 337 779 1061 301 231 Ctrl + 0.1 wt % 232485 1116 280 268 Potassium Aluminate Ctrl + 0.2 wt % 109 142 981 300 258Potassium Aluminate Ctrl + 0.25 wt % 0 0 851 279 212 Potassium AluminateCtrl + 0.3 wt % 0 0 724 214 219 Potassium Aluminate

The results showed that with the addition of potassium aluminate (KAlO₂)both SiN removal rate and TEOS removal rate were reduced versus thecontrol composition without any aluminate salt additive. The addition of0.25 wt % of potassium aluminate brought down the SiN removal rate andTEOS removal rate to 0.

The data also indicated that the SiN removal rate and TEOS removal ratecould be tuned as desired.

As the results for using sodium aluminate, the removal rates of otherfilms such as cobalt, copper, or a low-K film like a low-K film likeBlack Diamond 1™ (BD1) were least affected.

Example 5

0.2078 wt % of Aluminum Acetate(AlAc) was added to the controlcomposition (as shown in Table I) to obtain the barrier CMP polishingcomposition.

The CMP composition was used to polish a number of films of relevancefor barrier application such as cobalt, copper, low-K (BD1), siliconoxide (SiO₂) (TEOS), and silicon nitride(SiN).

The results of removal rates were shown in Table VI and FIG. 7.

TABLE VI SiN RR TEOS RR BD1 RR Co RR Cu RR (Å/min) (Å/min) (Å/min)(Å/min) (Å/min) Control (Ctrl) 325 789 1002 225 209 Ctrl + 0.2078 wt %224 477 1079 236 246 AlAc

The results showed that with the addition of 0.2078 wt % aluminumacetate, the SiN removal rate was reduced by 31% versus the controlcomposition; and TEOS removal rate was reduced by 40% versus the controlcomposition. While, the composition had no effect on the removal ratesof other films.

It has been demonstrated that the addition of an aluminate salt to acolloidal silica composition resulted in a reduction of removal ratesfor silicon containing films (such SiN and TEOS) while no or minimumeffect on other films such as cobalt, copper, or a low-K film like alow-K film like Black Diamond 1™ (BD1).

The ensuing detailed description provides preferred exemplaryembodiments only, and is not intended to limit the scope, applicability,or configuration of the invention. Rather, the ensuing detaileddescription of the preferred exemplary embodiments will provide thoseskilled in the art with an enabling description for implementing thepreferred exemplary embodiments of the invention. Various changes may bemade in the function and arrangement of elements without departing fromthe spirit and scope of the invention, as set forth in the appendedclaims.

1. A polishing composition comprising: 0.01 wt. % to 20 wt.% ofcolloidal silica particles, 0.01 wt. % to 10 wt. % of a water solublealuminum compound selected from the group consisting of sodiumaluminate, potassium aluminate, aluminum acetate, aluminum hydroxide,and combinations thereof; optionally, 0.0001 wt % to about 5 wt % of apH adjusting agent; 0.0001 wt % to 10 wt % of a surfactant selected fromthe group consisting of a). non-ionic surface wetting agents; b).anionic surface wetting agents; c). cationic surface wetting agents; d).ampholytic surface wetting agents; and mixtures thereof; 0.001% to about5 wt % of a corrosion inhibitor selected from the group consisting ofchemical additive containing nitrogen atoms in the molecules; 0.5 wt %to 10 wt % of an oxidizing agent selected from the group consisting ofperoxy-compound comprising at least one peroxy group (O—O), oxidizedhalide, perboric acid, perborate, percarbonate, peroxyacid,permanganate, chromate, cerium compound, ferricyanide, and mixturesthereof; and 0.1 wt % to 5 wt % of an organic acid selected from thegroup consisting of benzenesulfonic acid, toluenesulfonic acid or anyother suitable organic acid or amino acid or salt thereof; and water;wherein the polishing composition has a pH above
 7. 2. The polishingcomposition of claim 1, wherein the pH-adjusting agent is selected fromthe group consisting of hydrochloric acid, nitric acid, sulfuric acid,chloroacetic acid, tartaric acid, succinic acid, citric acid, malicacid, malonic acid, sulfonic acid, phosphoric acid, fatty acid,polycarboxylic acid, hydrogen chloride, and mixtures thereof; or isselected from the group consisting of potassium hydroxide, sodiumhydroxide, ammonia, quaternary organic ammonium hydroxide (e.g.tetramethylammonium hydroxide), ethylenediamine, piperazine,polyethyleneimine, modified polyethyleneimine, and mixtures thereof. 3.The polishing composition of claim 1, wherein the corrosion inhibitor isselected from the group consisting of benzotriazole (BTA) andbenzotriazole derivatives, triazole and their relative derivatives;imidizole and its derivatives, pyrazole and its derivatives,benzoimidizaole and its derivatives, and combinations thereof.
 4. Thepolishing composition of claim 1, wherein the non-ionic surface wettingagent is selected from the group consisting of ethoxylated alcohol,ethoxylated acetylenic diol surfactant, polyethylene glycol alkyl ether,proplylene glycol alkyl ether, glucoside alkyl ether, polyethyleneglycol octylphenyl ether, polyethylene glycol alkylpgenyl ether,glycerol alkyl ester, polyoxyethylene glycol sorbiton alkyl ester,sorbiton alkyl ester, cocamide monoethanol amine, cocamide diethanolamine, dodecyl dimethylamine oxide, block copolymers of polyethyleneglycol and polypropylene glycol, polyethoxylated tallow amines,fluorosurfactant, and combinations thereof; the anionic surface wettingagent is selected from the group consisting of alkyl carboxylate, alkylpolyacrylic salt, alkyl sulfate, alkyl phosphate, alkyl bicarboxylate,alkyl bisulfate, alkyl biphosphate, alkoxy carboxylate, alkoxy sulfate,alkoxy phosphate, alkoxy bicarboxylate, alkoxy bisulfate, alkoxybiphosphate, substituted aryl carboxylate, substituted aryl sulfate,substituted aryl phosphate, substituted aryl bicarboxylate, substitutedaryl bisulfate, substituted aryl biphosphate, and combinations thereof;the cationic surface wetting agent is a halide of molecules comprisinghydrophobic chain and cationic charge center selected from the groupconsisting of amine, quaternary ammonium, benzyalkonium andalkylpyridinium ion; and the ampholytic surface wetting agent possessboth positive (cationic) and negative (anionic) charges on the mainmolecular chains and with their relative counter ions.
 5. The polishingcomposition of claim 1, wherein the polishing composition has a pH of 8to
 12. 6. The polishing composition of claim 5, wherein the polishingcomposition has a pH of 10 to
 12. 7. A polishing method for chemicalmechanical planarization of a semiconductor device comprising at leastone surface having a first material and a second material, comprisingthe steps of: a) contacting the at least one surface with a polishingpad; b) delivering a polishing composition to the at least one surface,the polishing composition comprising: 0.01 wt. % to 20 wt.% of colloidalsilica particles; 0.01 wt. % to 10 wt. % of a water soluble aluminumcompound selected from the group consisting of sodium aluminate,potassium aluminate, aluminum acetate, aluminum hydroxide, andcombinations thereof; optionally, 0.0001 wt % to about 5 wt % of a pHadjusting agent; 0.0001 wt % to 10 wt % of a surfactant selected fromthe group consisting of a). non-ionic surface wetting agents; b).anionic surface wetting agents; c). cationic surface wetting agents; d).ampholytic surface wetting agents; and mixtures thereof; 0.001% to about5 wt % of a corrosion inhibitor selected from the group consisting ofchemical additive containing nitrogen atoms in the molecules; 0.5 wt %to 10 wt % of an oxidizing agent selected from the group consisting ofperoxy-compound comprising at least one peroxy group (O—O), oxidizedhalide, perboric acid, perborate, percarbonate, peroxyacid,permanganate, chromate, cerium compound, ferricyanide, and mixturesthereof; and 0.1 wt % to 5 wt % of an organic acid selected from thegroup consisting of benzenesulfonic acid, toluenesulfonic acid or anyother suitable organic acid or amino acid or salt thereof; and water;wherein the polishing composition has a pH above 7; c) polishing the atleast one surface with the polishing composition to remove the firstmaterial and to stop-on the second material with removal rate<100Å/min.; wherein the first material is selected from the groupconsisting of a metal, a barrier or liner material, a dielectricmaterial, and combinations thereof; and the second material comprises atleast one silicon containing material.
 8. The method of claim 7, whereinthe pH-adjusting agent in the polishing composition is selected from thegroup consisting of hydrochloric acid, nitric acid, sulfuric acid,chloroacetic acid, tartaric acid, succinic acid, citric acid, malicacid, malonic acid, sulfonic acid, phosphoric acid, fatty acid,polycarboxylic acid, hydrogen chloride, and mixtures thereof; or isselected from the group consisting of potassium hydroxide, sodiumhydroxide, ammonia, quaternary organic ammonium hydroxide (e.g.tetramethylammonium hydroxide), ethylenediamine, piperazine,polyethyleneimine, modified polyethyleneimine, and mixtures thereof; thecorrosion inhibitor in the polishing composition is selected from thegroup consisting of benzotriazole (BTA) and benzotriazole derivatives,triazole and their relative derivatives; imidizole and its derivatives,pyrazole and its derivatives, benzoimidizaole and its derivatives, andcombinations thereof; the non-ionic surface wetting agent is selectedfrom the group consisting of ethoxylated alcohol, ethoxylated acetylenicdiol surfactant, polyethylene glycol alkyl ether, proplylene glycolalkyl ether, glucoside alkyl ether, polyethylene glycol octylphenylether, polyethylene glycol alkylpgenyl ether, glycerol alkyl ester,polyoxyethylene glycol sorbiton alkyl ester, sorbiton alkyl ester,cocamide monoethanol amine, cocamide diethanol amine, dodecyldimethylamine oxide, block copolymers of polyethylene glycol andpolypropylene glycol, polyethoxylated tallow amines, fluorosurfactant,and combinations thereof; the anionic surface wetting agent is selectedfrom the group consisting of alkyl carboxylate, alkyl polyacrylic salt,alkyl sulfate, alkyl phosphate, alkyl bicarboxylate, alkyl bisulfate,alkyl biphosphate, alkoxy carboxylate, alkoxy sulfate, alkoxy phosphate,alkoxy bicarboxylate, alkoxy bisulfate, alkoxy biphosphate, substitutedaryl carboxylate, substituted aryl sulfate, substituted aryl phosphate,substituted aryl bicarboxylate, substituted aryl bisulfate, substitutedaryl biphosphate, and combinations thereof; the cationic surface wettingagent is a halide of molecules comprising hydrophobic chain and cationiccharge center selected from the group consisting of amine, quaternaryammonium, benzyalkonium and alkylpyridinium ion; and the ampholyticsurface wetting agent possess both positive (cationic) and negative(anionic) charges on the main molecular chains and with their relativecounter ions.
 9. The method of claim 7, wherein the polishingcomposition further comprising the corrosion inhibitor selected from thegroup consisting of benzotriazole (BTA) and benzotriazole derivatives,triazole or triazole derivatives, and combinations thereof; potassiumhydroxide; benzenesulfonic acid; optionally a peroxy-compound comprisingat least one peroxy group.
 10. The method of claim 7, wherein thepolishing composition further comprising the pH-adjusting agent selectedfrom the group consisting of hydrochloric acid, nitric acid, sulfuricacid, chloroacetic acid, tartaric acid, succinic acid, citric acid,malic acid, malonic acid, sulfonic acid, phosphoric acid, fatty acid,polycarboxylic acid, hydrogen chloride, and mixtures thereof; or isselected from the group consisting of potassium hydroxide, sodiumhydroxide, ammonia, quaternary organic ammonium hydroxide (e.g.tetramethylammonium hydroxide), ethylenediamine, piperazine,polyethyleneimine, modified polyethyleneimine, and mixtures thereof. 11.The method of claim 7, wherein the polishing composition furthercomprising the surfactant; wherein the non-ionic surface wetting agentis selected from the group consisting of ethoxylated alcohol,ethoxylated acetylenic diol surfactant, polyethylene glycol alkyl ether,proplylene glycol alkyl ether, glucoside alkyl ether, polyethyleneglycol octylphenyl ether, polyethylene glycol alkylpgenyl ether,glycerol alkyl ester, polyoxyethylene glycol sorbiton alkyl ester,sorbiton alkyl ester, cocamide monoethanol amine, cocamide diethanolamine, dodecyl dimethylamine oxide, block copolymers of polyethyleneglycol and polypropylene glycol, polyethoxylated tallow amines,fluorosurfactant, and combinations thereof; the anionic surface wettingagent is selected from the group consisting of alkyl carboxylate, alkylpolyacrylic salt, alkyl sulfate, alkyl phosphate, alkyl bicarboxylate,alkyl bisulfate, alkyl biphosphate, alkoxy carboxylate, alkoxy sulfate,alkoxy phosphate, alkoxy bicarboxylate, alkoxy bisulfate, alkoxybiphosphate, substituted aryl carboxylate, substituted aryl sulfate,substituted aryl phosphate, substituted aryl bicarboxylate, substitutedaryl bisulfate, substituted aryl biphosphate, and combinations thereof;the cationic surface wetting agent is a halide of molecules comprisinghydrophobic chain and cationic charge center selected from the groupconsisting of amine, quaternary ammonium, benzyalkonium andalkylpyridinium ion; and the ampholytic surface wetting agent possessboth positive (cationic) and negative (anionic) charges on the mainmolecular chains and with their relative counter ions.
 12. The method ofclaim 7, wherein the polishing composition further comprising theorganic acid.
 13. The method of claim 7, wherein the polishingcomposition further comprising the pH-adjusting agent selected from thegroup consisting of hydrochloric acid, nitric acid, sulfuric acid,chloroacetic acid, tartaric acid, succinic acid, citric acid, malicacid, malonic acid, sulfonic acid, phosphoric acid, fatty acid,polycarboxylic acid, hydrogen chloride, and mixtures thereof; or isselected from the group consisting of potassium hydroxide, sodiumhydroxide, ammonia, quaternary organic ammonium hydroxide (e.g.tetramethylammonium hydroxide), ethylenediamine, piperazine,polyethyleneimine, modified polyethyleneimine, and mixtures thereof; thecorrosion inhibitor selected from the group consisting of benzotriazole(BTA) and benzotriazole derivatives, triazole and their relativederivatives; imidizole and its derivatives, pyrazole and itsderivatives, benzoimidizaole and its derivatives, and combinationsthereof; the surfactant; wherein the non-ionic surface wetting agent isselected from the group consisting of ethoxylated alcohol, ethoxylatedacetylenic diol surfactant, polyethylene glycol alkyl ether, proplyleneglycol alkyl ether, glucoside alkyl ether, polyethylene glycoloctylphenyl ether, polyethylene glycol alkylpgenyl ether, glycerol alkylester, polyoxyethylene glycol sorbiton alkyl ester, sorbiton alkylester, cocamide monoethanol amine, cocamide diethanol amine, dodecyldimethylamine oxide, block copolymers of polyethylene glycol andpolypropylene glycol, polyethoxylated tallow amines, fluorosurfactant,and combinations thereof; the anionic surface wetting agent is selectedfrom the group consisting of alkyl carboxylate, alkyl polyacrylic salt,alkyl sulfate, alkyl phosphate, alkyl bicarboxylate, alkyl bisulfate,alkyl biphosphate, alkoxy carboxylate, alkoxy sulfate, alkoxy phosphate,alkoxy bicarboxylate, alkoxy bisulfate, alkoxy biphosphate, substitutedaryl carboxylate, substituted aryl sulfate, substituted aryl phosphate,substituted aryl bicarboxylate, substituted aryl bisulfate, substitutedaryl biphosphate, and combinations thereof; the cationic surface wettingagent is a halide of molecules comprising hydrophobic chain and cationiccharge center selected from the group consisting of amine, quaternaryammonium, benzyalkonium and alkylpyridinium ion; and the ampholyticsurface wetting agent possess both positive (cationic) and negative(anionic) charges on the main molecular chains and with their relativecounter ions; and the organic acid; wherein the polishing compositionhas a pH of 8 to
 12. 14. The method of claim 7, wherein removal rateratio between the first material and the second material is greater than10.
 15. The method of claim 7, wherein the first material is selectedfrom the group consisting of metal film selected from the groupconsisting of Cu, W, Co, Al and combinations thereof; barrier or linerfilm selected from the group consisting of Ta, TaN, Ti, TiN, Ru andcombinations thereof; low-k material dielectric film; and combinationsthereof; and the at least one silicon containing material is selectedfrom the group consisting of silicon nitride, silicon oxide, siliconcarbide, and combinations thereof.
 16. The method of claim 15, whereinremoval rate for the second material is less than 10 Å/min.
 17. Themethod of claim 15 , wherein removal rate ratio between the firstmaterial and the second material is greater than
 100. 18. A system forchemical mechanical planarization, comprising: a patterned substratecomprising at least one surface having a first material selected fromthe group consisting of a metal, a barrier or liner material, adielectric material and combinations thereof; and a second materialcomprising at least one silicon containing material; a polishing pad;and a polishing composition to the at least one surface, the polishingcomposition comprising: 0.01 wt. % to 20 wt.% of colloidal silicaparticles; 0.01 wt. % to 10 wt. % of a water soluble aluminum compoundselected from the group consisting of sodium aluminate, potassiumaluminate, aluminum acetate, aluminum hydroxide, and combinationsthereof; optionally, 0.0001 wt % to about 5 wt % of a pH adjustingagent; 0.0001 wt % to 10 wt % of a surfactant selected from the groupconsisting of a). non-ionic surface wetting agents; b). anionic surfacewetting agents; c). cationic surface wetting agents; d). ampholyticsurface wetting agents; and mixtures thereof; 0.001% to about 5 wt % ofa corrosion inhibitor selected from the group consisting of chemicaladditive containing nitrogen atoms in the molecules; 0.5 wt % to 10 wt %of an oxidizing agent selected from the group consisting ofperoxy-compound comprising at least one peroxy group (O—O), oxidizedhalide, perboric acid, perborate, percarbonate, peroxyacid,permanganate, chromate, cerium compound, ferricyanide, and mixturesthereof; and 0.1 wt % to 5 wt % of an organic acid selected from thegroup consisting of benzenesulfonic acid, toluenesulfonic acid or anyother suitable organic acid or amino acid or salt thereof; and water;wherein the polishing composition has a pH above 7 and the at least onesurface is in contact with the polishing pad and the polishingcomposition.
 19. The system of claim 18, wherein the pH-adjusting agentin the polishing composition is selected from the group consisting ofhydrochloric acid, nitric acid, sulfuric acid, chloroacetic acid,tartaric acid, succinic acid, citric acid, malic acid, malonic acid,sulfonic acid, phosphoric acid, fatty acid, polycarboxylic acid,hydrogen chloride, and mixtures thereof; or is selected from the groupconsisting of potassium hydroxide, sodium hydroxide, ammonia, quaternaryorganic ammonium hydroxide (e.g. tetramethylammonium hydroxide),ethylenediamine, piperazine, polyethyleneimine, modifiedpolyethyleneimine, and mixtures thereof; the corrosion inhibitor in thepolishing composition is selected from the group consisting ofbenzotriazole (BTA) and benzotriazole derivatives, triazole and theirrelative derivatives; imidizole and its derivatives, pyrazole and itsderivatives, benzoimidizaole and its derivatives, and combinationsthereof; the non-ionic surface wetting agent is selected from the groupconsisting of ethoxylated alcohol, ethoxylated acetylenic diolsurfactant, polyethylene glycol alkyl ether, proplylene glycol alkylether, glucoside alkyl ether, polyethylene glycol octylphenyl ether,polyethylene glycol alkylpgenyl ether, glycerol alkyl ester,polyoxyethylene glycol sorbiton alkyl ester, sorbiton alkyl ester,cocamide monoethanol amine, cocamide diethanol amine, dodecyldimethylamine oxide, block copolymers of polyethylene glycol andpolypropylene glycol, polyethoxylated tallow amines, fluorosurfactant,and combinations thereof; the anionic surface wetting agent is selectedfrom the group consisting of alkyl carboxylate, alkyl polyacrylic salt,alkyl sulfate, alkyl phosphate, alkyl bicarboxylate, alkyl bisulfate,alkyl biphosphate, alkoxy carboxylate, alkoxy sulfate, alkoxy phosphate,alkoxy bicarboxylate, alkoxy bisulfate, alkoxy biphosphate, substitutedaryl carboxylate, substituted aryl sulfate, substituted aryl phosphate,substituted aryl bicarboxylate, substituted aryl bisulfate, substitutedaryl biphosphate, and combinations thereof; the cationic surface wettingagent is a halide of molecules comprising hydrophobic chain and cationiccharge center selected from the group consisting of amine, quaternaryammonium, benzyalkonium and alkylpyridinium ion; and the ampholyticsurface wetting agent possess both positive (cationic) and negative(anionic) charges on the main molecular chains and with their relativecounter ions.
 20. The system of claim 18, wherein the metal film isselected from the group consisting of Cu, W, Co, Al and combinationsthereof; the barrier or liner film is selected from the group consistingof Ta, TaN, Ti, TiN, Ru and combinations thereof; and the dielectricfilm is a low-k material; and the at least one silicon containingmaterial is selected from the group consisting of silicon nitride,silicon oxide, silicon carbide, and combinations thereof; wherein thepolishing composition has a pH of 8 to 12.